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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2520AW DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current- Continuous Collector Current-Peak IB B Base Current- Continuous w ww scs .i 800 V 7.5 V 10 A 25 A 6 A 9 A 125 W 150 .cn mi e IBM Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2520AW TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) ICES Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.1 1.0 2.0 1.0 V Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125 VEB= 7.5V; IC= 0 mA IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance Switching times tstg tf Storage Time w ww scs .i IC= 0.1A; VCE= 5V IC= 6A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz .cn mi e 5 mA 13 9.5 115 pF Fall Time IC= 6A , IB(end)= 1.0A;LC= 650H; LB= 5.3H; Cfb= 19nF; -VBB= 4V; (-dIB/dt= 0.8A/s) 5.5 s s 0.5 isc Websitewww.iscsemi.cn 2 |
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